Understanding of Plasma Processing Aiming at Manufacturing of Sub-Nanometer-Node Semiconductor Devices

6. 2. 2023  11:00 - 13:00  

CEITEC BUT, Purkyňova 123, 61200 Brno, S building, large meeting room  

Prof. Satoshi Hamaguchi (University of Osaka)

The dimensions of advanced semiconductor devices are now approaching the sizes of atoms and the further improvement of device performance has been achieved by the use of complex three-dimensional device structures and new materials. Plasma processing, which is widely used in semiconductor manufacturing, is one of the key technologies to form such complex device structures on material surfaces with atomic-scale accuracy. Successful development of advanced plasma processing technologies meeting the needs of future semiconductor manufacturing depends on a good understanding of plasma surface interactions under extreme conditions. In this presentation, the author discusses key technical challenges and possible approaches toward a better understanding of fundamental science of plasma processing, such as surface chemical reactions of atomic layer deposition (ALD) and atomic layer etching (ALE). 

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