Seminar series: Plasma-surface interactions of atomic layer processing toward sub-nm-node semiconductor devices

12. 12. 2023

11:00 - 12:30  

CEITEC BUT, Purkyňova 123, Building S, Meeting room – S2.02 

Prof. Satoshi Hamaguchi
Osaka University

Plasma technologies are the driving force for the most advanced semiconductor manufacturing processes, where semiconductor chips based on the 3 nm technology node are currently in mass production. As the device sizes approach the atomic sizes, complex device structures such as those for gate-all-around field-effect transistors (GAA-FETs) and new (i.e., non-Si-based) materials need to be introduced for the device performance to keep up with the demand. Accordingly, highly innovative plasma processing techniques with atomic-scale accuracy must be developed expeditiously and cost-effectively. In this presentation, the current status of semiconductor manufacturing technologies will be reviewed and the latest technological challenges and possible solutions will be discussed, using some of the latest research results on atomic-layer etching (PE-ALE) of Si-based materials and metal surfaces.